Abstract
In article number https://doi.org/10.1002/advs.201800714, Ye Zhou, Su‐Ting Han, Vellaisamy A. L. Roy, and co‐workers report a phototunable carbon dots‐silk based resistive random access memory device. Ultraviolet illumination triggers excitons generation and subsequent photogating effect stemmed from trapped electrons in the active layer, ultimately decreasing the SET voltage. The photo‐enhanced charge trapping effect is considered to be in charge of the tunable resistive switching behavior. [Image: see text]