Abstract
Gallium liquid metal is one of the promising phase change materials for passive thermal management of electronics due to their high thermal conductivity and latent heat per volume. However, it suffers from severe supercooling, in which molten gallium does not return to solid due to the lack of nucleation. It may require 28.2 °C lower temperature than the original freezing point to address supercooling, leading to unstable thermal regulation performance along fluctuations of cooling condition. Here, gallium is infused into porous copper in an oxide-free environment, forming intermetallic compound impurities at the interfaces to reduce the activation energy for heterogeneous nucleation. The porous-shaped gallium provides ≈63% smaller supercooling than that of the bulk type due to large specific surface area (≈9,070 cm(2) per cm(3)) and high wetting characteristics (≈16° of contact angle) on CuGa(2) intermetallic layer. During repetitive heating-cooling cycles, porous-shaped gallium consistently shows propagation of crystallization at even near room temperature (≈25 °C) while maintaining stable performance as thermal buffer, whereas droplet-shaped gallium is gradually degraded due to partial-supercooled state. The findings will improve the responsive thermal regulation performance to relieve a rapid increase in temperature of semiconductors/batteries, and also have a potential for energy storage applications.