Abstract
We investigated the incorporation of Zr into TiO (x) cathode interlayers used as hole-blocking layers in an organometallic halide perovskite-based photodetector. The device configuration is ITO/PEDOT:PSS/CH(3)NH(3)PbI (x) Cl(3-x) /PC(60)BM/Zr-TiO (x) /Al. The use of Zr-TiO (x) in the perovskite photodetector reduces the leakage current and improves carrier extraction. The performance of the perovskite photodetector was confirmed by analyzing the current-voltage characteristics, impedance behaviors, and dynamic characteristics. The device with a Zr-TiO (x) layer has a high specific detectivity of 1.37 × 10(13) Jones and a bandwidth of 2.1 MHz at a relatively low reverse bias and light intensity. Therefore, it can be effectively applied to devices such as image and optical sensors.