Abstract
In this study, the full potential linearization enhanced plane wave method in density functional theory is used. Additionally, the structure, mechanical, and thermoelectric properties of half-Heusler compounds RhBiX (X = Ti, Zr, Hf) are investigated for the first time. The indirect semiconductors RhBiTi and RhBiZr have 0.89 and 1.06 eV bandgap energies, respectively. In contrast, RhBiHf is a direct bandgap semiconductor with a bandgap energy of 0.33 eV. The thermoelectric parameters such as Seebeck coefficient, power factor, electronic conductivity, lattice thermal conductivity, electronic thermal conductivity, and figure of merit ZT, are studied with the semi-classical Boltzmann transport theory. When T = 300 K, RhBiTi, RhBiZr, and RhBiHf show small lattice thermal conductivities, i.e., 10.60, 10.15, and 7.71 W mK(-1), respectively, which are consistent with related other studies. The maximum ZT values of RhBiTi, RhBiZr, and RhBiXHf are 0.91, 0.94, and 0.79 at 900 K, respectively. Furthermore, we observed that RhBiX (X = Ti, Zr, Hf) alloy is a thermoelectric material with great potential.