Electronic and optical properties of heterostructures based on transition metal dichalcogenides and graphene-like zinc oxide

基于过渡金属二硫化物和类石墨烯氧化锌的异质结构的电子和光学性质

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Abstract

The structural, electronic, and optical properties of heterostructures formed by transition metal dichalcogenides MX(2) (M = Mo, W; X = S, Se) and graphene-like zinc oxide (ZnO) were investigated using first-principles calculations. The interlayer interaction in all heterostructures was characterized by van der Waals forces. Type-II band alignment occurs at the MoS(2)/ZnO and WS(2)/ZnO interfaces, together with the large built-in electric field across the interface, suggesting effective photogenerated-charge separation. Meanwhile, type-I band alignment occurs at the MoSe(2)/ZnO and WSe(2)/ZnO interfaces. Moreover, all heterostructures exhibit excellent optical absorption in the visible and infrared regions, which is vital for optical applications.

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