Abstract
ScAlMgO(4) (SCAM), which can be used as an epitaxial substrate material of GaN in power devices, faces the challenge of achieving a high-quality surface by ultra-precision polishing due to its brittle and easily cleaved characteristics, which are closely associated with its mechanical properties. The micromechanical properties of SCAM single crystals were evaluated by nanoindentation and microscratch tests using different indenters. The elastic modulus E(IT) and the indentation hardness H(IT) of SCAM obtained by nanoindentation were 226 GPa and 12.1 GPa, respectively. Leaf-shaped chips and the associated step-like planes of SCAM can be found in the severely damaged regime during scratching by Berkovich and Vickers indenters with sharp edges due to the intersection of intense radial and lateral cracks. The fracture toughness (K(c) = 1.12 MPa·m(1/2)) of SCAM can be obtained by using a scratch-based methodology for a spherical indenter based on linear elastic fracture mechanics (LEFM) under an appropriate range of applied loads. An optimal expression for calculating the fracture toughness of easily cleaved materials, including SCAM, via the Vickers indenter-induced cracking method using a Berkovich indenter was recommended.