Abstract
In this work, Eu(2)O(3)-doped (CaCu(3)Ti(4)O(12))(x) of low dielectric loss have been fabricated using both conventional (CS) and microwave sintering (MWS), where x = Eu(2)O(3) = 0.1, 0.2, and 0.3, respectively. According to X-ray diffraction (XRD) and scanning electron microscope (SEM) reports, increasing the concentration of Eu(3+) in the CCTO lattice causes the grain size of the MWS samples to increase and vice versa for CS. The X-ray photoelectron spectroscopy (XPS) delineated the binding energies and charge states of the Cu(2+)/Cu(+) and Ti(4+)/Ti(3+) transition ions. Energy dispersive spectroscopy (EDS) analysis revealed no Cu-rich phase along the grain boundaries that directly impacts the dielectric properties. The dielectric characteristics, which include dielectric constant (ε) and the loss (tan δ), were examined using broadband dielectric spectrometer (BDS) from 10 to 10(7) Hz at ambient temperature. The dielectric constant was >10(4) and >10(2) for CS and MWS samples at x > 0.1, respectively, with the low loss being constant even at high frequencies due to the effective suppression of tan δ by Eu(3+). This ceramic of low dielectric loss has potential for commercial applications at comparatively high frequencies.