Abstract
In searching for unique and unexplored 2D materials, the authors try to investigate for the very first time the use of delaminated V-MXene coupled with precious metal ruthenium (Ru) through atomic layer deposition (ALD) for various contact and noncontact mode of real-time temperature sensing applications at the human-machine interface. The novel delaminated V-MXene (DM-V(2) CT(x) ) engineered ruthenium-ALD (Ru-ALD) temperature sensor demonstrates a competitive sensing performance of 1.11% °C(-1) as of only V-MXene of 0.42% °C(-1) . A nearly threefold increase in sensing and reversibility performance linked to the highly ordered few-layered V-MXene and selective, well-controlled Ru atomic doping by ALD for the successful formation of Ru@DM-V(2) CT(X) heterostructure. The advanced heterostructure formation, the mechanism, and the role of Ru have been comprehensively investigated by ultra-high-resolution transmission/scanning transmission electron microscopies coupled with next-generation spherical aberration correction technology and fast, accurate elemental mapping quantifications, also by ultraviolet photoelectron spectroscopy. To the knowledge, this work is the first to use the novel, optimally processed V-MXene over conventionally used Ti-MXene and its surface-internal structure engineering by Ru-ALD process-based temperature-sensing devices function and operational demonstrations. The current work could potentially motivate the development of multifunctional, future, next-generation, safe, personal healthcare electronic devices by the industrially scalable ALD technique.