Abstract
Heterostructures of Ga[Formula: see text]O[Formula: see text] with other materials such as Si, SiC or diamond, are a possible way of addressing the low thermal conductivity and lack of p-type doping of Ga[Formula: see text]O[Formula: see text] for device applications, as well as of improving device reliability. In this work we study the electrical and thermal properties of Ga[Formula: see text]O[Formula: see text]-SiO[Formula: see text] heterostructures. Here, thin-film gallium oxide with thickness ranging between 8 and 30 nm was deposited onto a silicon substrate with a thermal oxide by means of oxidised liquid gallium layer delamination. The resulting heterostructure is then characterised by means of X-ray photoelectron spectroscopy and transient thermoreflectance. The thin-film gallium oxide valence band offset with respect to the SiO[Formula: see text] is measured as 0.1 eV and predicted as [Formula: see text] eV with respect to diamond. The thin-film's out-of-plane thermal conductivity is determined to be 3 ±0.5 Wm[Formula: see text] K[Formula: see text], which is higher than what has been previously measured for other polycrystalline Ga[Formula: see text]O[Formula: see text] films of comparable thickness.