Abstract
We synthesized a CaZrO(3)/SrTiO(3) oxide heterostructure, which can serve as an alternative to LaAlO(3)/SrTiO(3), and confirmed the generation of 2-dimensional electron gas (2-DEG) at the heterointerface. We analyzed the electrical-transport properties of the 2-DEG to elucidate its intrinsic characteristics. Based on the magnetic field dependence of resistance at 2 K, which exhibited Weak Anti-localization (WAL) behaviors, the fitted Rashba parameter values were found to be about 12-15 × 10(-12) eV*m. These values are stronger than the previous reported Rashba parameters obtained from the 2-DEGs in other heterostructure systems and several layered 2D materials. The observed strong spin-orbit coupling (SOC) is attributed to the strong internal electric field generated by the lattice mismatch between the CaZrO(3) layer and SrTiO(3) substrate. This pioneering strong SOC of the 2-DEG at the CaZrO(3)/SrTiO(3) heterointerface may play a pivotal role in the developing future metal oxide-based quantum nanoelectronics devices.