Abstract
In this study, the reliability characteristics of metal-insulator-semiconductor (MIS) capacitor structures with low-dielectric-constant (low-k) materials have been investigated in terms of metal gate area and geometry and thickness of dielectric film effects. Two low-k materials, dense and porous low-k films, were used. Experimental results indicated that the porous low-k films had shorter breakdown times, lower Weibull slope parameters and electric field acceleration factors, and weaker thickness-dependence breakdowns compared to the dense low-k films. Additionally, a larger derivation in dielectric breakdown projection model and a single Weilbull plot of the breakdown time distributions from various areas merging was observed. This study also pointed out that the porous low-k film in the irregular-shaped metal gate MIS capacitor had a larger dielectric breakdown time than that in the square- and circle-shaped samples, which violates the trend of the sustained electric field. As a result, another breakdown mechanism exists in the irregular-shaped sample, which is required to explore in the future work.