Abstract
For the CH(3)NH(3)PbI(3)-based optoelectronic memristor, the high ion-migration randomness induces high fluctuation in the resistive switching (RS) parameters. Grain boundaries (GBs) are well known as the ion-migration sites due to their low energy barrier. Herein, a polyacrylonitrile (PAN) passivation method is developed to reduce GBs of the CH(3)NH(3)PbI(3) film and improve the switching uniformity of the memristor. The crystal grain size of CH(3)NH(3)PbI(3) increases with the addition of PAN, and the corresponding number of GBs is consequently reduced. The fluctuations of the RS parameters of the memristor device are significantly reduced. With the memristor, nonvolatile image sensing, image memory, and image Boolean operations are demonstrated. This work proposes a strategy for developing high-performance CH(3)NH(3)PbI(3) optoelectronic memristors.