Abstract
This study discusses the potential application of ITO/ZnO/HfO(x)/W bilayer-structured memory devices in neuromorphic systems. These devices exhibit uniform resistive switching characteristics and demonstrate favorable endurance (>10(2)) and stable retention (>10(4) s). Notably, the formation and rupture of filaments at the interface of ZnO and HfO(x) contribute to a higher ON/OFF ratio and improve cycle uniformity compared to RRAM devices without the HfO(x) layer. Additionally, the linearity of potentiation and depression responses validates their applicability in neural network pattern recognition, and spike-timing-dependent plasticity (STDP) behavior is observed. These findings collectively suggest that the ITO/ZnO/HfO(x)/W structure holds the potential to be a viable memory component for integration into neuromorphic systems.