Abstract
At temperatures below the onset of vacancy migration, metals exposed to energetic ions develop dynamically fluctuating steady-state microstructures. Statistical properties of these microstructures in the asymptotic high exposure limit are not universal and vary depending on the energy and mass of the incident ions. We develop a model for the microstructure of an ion-irradiated metal under athermal conditions, where internal stress fluctuations dominate the kinetics of structural evolution. The balance between defect production and recombination depends sensitively not only on the total exposure to irradiation, defined by the fluence, but also on the energy of the incident particles. The model predicts the defect content in the high dose limit as an integral of the spectrum of primary knock-on atom energies, with the finding that low energy ions produce a significantly higher amount of damage than high energy ions at comparable levels of exposure to radiation.