Abstract
The impact of radiation on MoS(2)-based devices is an important factor in the utilization of two-dimensional semiconductor-based technology in radiation-sensitive environments. In this study, the effects of gamma irradiation on the electrical variations in MoS(2) field-effect transistors with buried local back-gate structures were investigated, and their related effects on Al(2)O(3) gate dielectrics and MoS(2)/Al(2)O(3) interfaces were also analyzed. The transfer and output characteristics were analyzed before and after irradiation. The current levels decreased by 15.7% under an exposure of 3 kGy. Additionally, positive shifts in the threshold voltages of 0.50, 0.99, and 1.15 V were observed under irradiations of 1, 2, and 3 kGy, respectively, compared to the non-irradiated devices. This behavior is attributable to the comprehensive effects of hole accumulation in the Al(2)O(3) dielectric interface near the MoS(2) side and the formation of electron trapping sites at the interface, which increased the electron tunneling at the MoS(2) channel/dielectric interface.