Insight into the structural, optoelectronic, and thermoelectric properties of Fe2HfSi Heusler by DFT investigation

通过 DFT 研究深入了解 Fe2HfSi Heusler 的结构、光电和热电特性

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作者:Abida Azam, Ramesh Sharma, Debidatta Behera, Hafiz Hamid Raza, H Saad Ali, Shaimaa A M Abdelmohsen, Ashraf M M Abdelbacki, Sanat Kumar Mukherjee

Abstract

At high pressure, the pressure dependencies of the structural, electronic, optical, and thermoelectric properties of Fe2HfSi Heusler were calculated using the FP-LAPW method within the framework of the density functional theory. The calculations were carried out using the modified Becke-Johnson (mBJ) scheme. Our calculations showed that the Born mechanical stability criteria confirmed the mechanical stability in the cubic phase. Further, through Poisson and Pugh's ratios critical limits, the findings of the ductile strength were computed. At a pressure of 0 GPa, the indirect nature of the material may be deduced from the electronic band structures of Fe2HfSi as well as the estimations for its density of states. Under pressure, the real and imaginary dielectric function responses, optical conductivity, absorption coefficient, energy loss function, refractive index, reflectivity, and extinction coefficient were computed in the 0-12 eV range. Using semi-classical Boltzmann theory, a thermal response is also studied. As the pressure rises, the Seebeck coefficient decreases, while the electrical conductivity rises. The figure of merit (ZT) and Seebeck coefficients were determined at temperatures of 300 K, 600 K, 900 K, and 1200 K in order to better understand the thermoelectric properties of a material at these different temperatures. Despite the fact that the ideal Seebeck coefficient for Fe2HfSi was discovered at 300 K and was determined to be superior to that reported previously. Materials with a thermoelectric reaction has been shown to be suitable for reusing waste heat in systems. As a result, Fe2HfSi functional material may aid in the development of new energy harvesting and optoelectronic technologies.

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