Abstract
While defects are undesirable for the reliability of electronic devices, particularly in scaled microelectronics, they have proven beneficial in numerous quantum and energy-harvesting applications. However, their potential for new computational paradigms, such as neuromorphic and brain-inspired computing, remains largely untapped. In this study, we harness defects in aggressively scaled field-effect transistors based on two-dimensional semiconductors to accelerate a stochastic inference engine that offers remarkable noise resilience. We use atomistic imaging, density functional theory calculations, device modeling, and low-temperature transport experiments to offer comprehensive insight into point defects in WSe(2) FETs and their impact on random telegraph noise. We then use random telegraph noise to construct a stochastic encoder and demonstrate enhanced inference accuracy for noise-inflicted medical-MNIST images compared to a deterministic encoder, utilizing a pre-trained spiking neural network. Our investigation underscores the importance of leveraging intrinsic point defects in 2D materials as opportunities for neuromorphic computing.