Abstract
Confined geometries are used to increase measurement sensitivity to thermal boundary resistance at buried SiO(2) interfaces with frequency-domain thermoreflectance (FDTR). We show that radial confinement of the transducer film and additional underlying material layers prevents heat from spreading and increases the thermal penetration depth of the thermal wave. Parametric analyses are performed with finite element methods and used to examine the extent to which the thermal penetration depth increases as a function of a material's effective thermal resistance and the degree of material confinement relative to the pump beam diameter. To our surprise, results suggest that the measurement technique is not always the most sensitive to the largest thermal resistor in a multilayer material. We also find that increasing the degree to which a material is confined improves measurement sensitivity to the thermal resistance across material interfaces that are buried 10s of μm to mm below the surface. These results are used to design experimental measurements of etched, 200 nm thick SiO(2) films deposited on Al(2)O(3) substrates, and offer an opportunity for thermal scientists and engineers to characterize the thermal resistance across a broader range of material interfaces within electronic device architectures that have historically been difficult to access via experiment.