Abstract
BiFeO(3) is a fascinating material with a rhombohedral crystal structure (R3c) at room temperature. This unique structure makes it suitable for use in solar cells, as the interaction of light with the polarized octahedral enhances electron movement. Evaluating its properties on different substrates helps to identify the specific characteristics of thin films. The thin films presented in this work were deposited using reactive RF cathodic sputtering with a homemade 1-inch diameter ceramic target. Their morphology, phase composition, optical, piezoelectric, and ferroelectric properties were evaluated. Fluorine Tin Oxide (FTO) and Indium Tin Oxide (ITO) substrates were used for the presented thin films. The thin films deposited on FTO displayed the "butterfly" behavior typically associated with ferroelectric materials. A d(33) value of 2.71 nm/V was determined using SSPFM-DART mode. In contrast, the thin films deposited on ITO at 550 °C reached a maximum saturation polarization of 40.89 μC/cm(2) and a remnant polarization of 44.87 μC/cm(2), which are the highest values recorded, but did not present the typical "butterfly" behavior. As the grain size increased, the influence of charge defects became more pronounced, leading to an increase in the leakage current. Furthermore, the presence of secondary phases also contributed to this behavior.