Abstract
This work explores the deposition of hexagonal (h-) LuMnO(3) thin films in the P6(3)cm phase and investigates the conditions under which the synergy of ferroelectric and photoactive properties, can be achieved to confirm the potential of this material for applications in the development of next-generation photovoltaic devices. Single-phase h-LuMnO(3) was successfully deposited on different substrates, and the thermal stability of the material was confirmed by Micro-Raman spectroscopy analysis from 77 to 850 K, revealing the suitable ferro- to para-electric transition near 760 K. Optical measurements confirm the relatively narrow band gap at 1.5 eV, which corresponds to the h-LuMnO(3) system. The presence of domain structures and the signature of hysteresis loops consistent with ferroelectric behaviour were confirmed by piezoresponse force microscopy. In addition, light-dependent photocurrent measurements revealed the photoactive sensitivity of the material.