Abstract
Achieving deep-blue light with high color saturation remains a critical challenge in the development of white light-emitting diode (LED) technology, necessitating luminescent materials that excel in efficiency, low toxicity, and stability. Here, we report the synthesis of [N(C(2)H(5))(4)](2)Cu(2)I(4) (TEA(2)Cu(2)I(4)) single crystals (SCs), which exhibit deep-blue photoluminescence (PL) at 450 nm. These crystals are characterized by a significant Stokes shift of 180 nm, a long lifetime of 1.7 μs, and an impressive photoluminescence quantum yield (PLQY) of 96.7% for SCs and 87.2% for polycrystalline films. The zero-dimensional structure is attributed to the proper spacing of triangular inorganic units [Cu(2)I(4)](2-) by organic cations [N(C(2)H(5))(4)](+). This structural arrangement facilitates broadband deep-blue light emission with phosphorescent characteristics, as evidenced by temperature-dependent PL and time-resolved photoluminescence (TRPL) measurements. The band gap properties of TEA(2)Cu(2)I(4) were further elucidated through density functional theory (DFT) computations. Notably, the material exhibited minimal PL intensity degradation after continuous UV irradiation and one month of exposure to ambient conditions. Moreover, the polycrystalline film of TEA(2)Cu(2)I(4) maintained substantial deep-blue emission even after one year of storage. Utilizing TEA(2)Cu(2)I(4) thin film, we fabricated an electroluminescent device emitting deep-blue light with high color saturation, featuring CIE coordinates (0.143, 0.076) and a brightness of 90 cd/m(2). The exceptional photophysical properties of TEA(2)Cu(2)I(4) render it a highly promising candidate for optoelectronic applications.