Enhancement of phase transition temperature through hydrogen bond modification in molecular ferroelectrics

通过改变分子铁电体中的氢键来提高相变温度

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Abstract

Molecular ferroelectrics are attracting great interest due to their light weight, mechanical flexibility, low cost, ease of processing and environmental friendliness. These advantages make molecular ferroelectrics viable alternatives or supplements to inorganic ceramics and polymer ferroelectrics. It is expected that molecular ferroelectrics with good performance can be fabricated, which in turns calls for effective chemical design strategies in crystal engineering. To achieve so, we propose a hydrogen bond modification method by introducing the hydroxyl group, and successfully boost the phase transition temperature (T(c)) by at least 336 K. As a result, the molecular ferroelectric 1-hydroxy-3-adamantanammonium tetrafluoroborate [(HaaOH)BF(4)] can maintain ferroelectricity until 528 K, a T(c) value much larger than that of BTO (390 K). Meanwhile, micro-domain patterns, in stable state for 2 years, can be directly written on the film of (HaaOH)BF(4). In this respect, hydrogen bond modification is a feasible and effective strategy for designing molecular ferroelectrics with high T(c) and stable ferroelectric domains. Such an organic molecule with varied modification sites and the precise crystal engineering can provide an efficient route to enrich high-T(c) ferroelectrics with various physical properties.

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