Abstract
In this work, we utilized CsPbBr(3) powder as the precursor material for the single-source vapor deposition (SSVD) process to fabricate the CsPbBr(3) emitting layer. Due to the high density of grain boundaries and defects in the thin films deposited in the initial stages, non-radiative recombination can occur, reducing the efficiency of perovskite light-emitting diodes (PeLED). To address this issue, we employed a thermal annealing process by subjecting the perovskite films to the appropriate annealing temperature, facilitating the coalescence and growth of different grains, improving lattice integrity, and thereby reducing the presence of defects and enhancing the photoluminescence performance of the films. Furthermore, in this study, we successfully fabricated simple-structured CsPbBr(3) PeLED using thermally annealed CsPbBr(3) films. Among these components, even without adding the electron and hole transport layers, the best-performing device achieved a maximum brightness of 14,079 cd/m(2) at a driving voltage of only 2.92 V after annealing at 350 °C; the brightness is 16.8 times higher than that of CsPbBr(3) PeLED without heat treatment, demonstrating outstanding light-emitting performance. The research results show that using SSVD to prepare CsPbBr(3) PeLED has broad application potential, providing a simple process option for research on improving the performance of PeLED.