Abstract
We explore light storage in antirelaxation-coated and buffer-gas-filled alkali vapor cells, employing electromagnetically induced transparency (EIT) in warm rubidium vapor. We conduct a comparative study of light storage performance under identical experimental conditions for these two cell types. Using a buffer-gas-filled cell resulted in approximately a tenfold improvement in memory efficiency and storage time compared to antirelaxation-coated cells. Moreover, we demonstrate that memory efficiency can be further enhanced by choosing a near-resonant EIT Λ -scheme over a resonant one. Our findings provide valuable insights for optimizing light storage, thereby contributing to the development of field-deployable quantum memories.