Abstract
L1(0) FePd is a promising candidate material for spin memory devices, especially when paired with Ir as an interlayer coupling layer, leading to significant interlayer exchange coupling (IEC) energy between ferromagnetic layers and strong perpendicular magnetic anisotropy. Synthetic antiferromagnets (SAFs) are emphasized for spintronic applications, offering advantages like quick magnetization switching and enhanced stability. This study presents findings on the influence of Ir spacer thickness on the structural and magnetic properties of FePd SAFs, highlighting lattice matching and coherence throughout the entire SAF structure and revealing a maximum interlayer exchange energy of 3 mJ/m(2). We suggest the potential of this FePd|Ir|FePd system as a building block for future spintronic applications.