Abstract
This research work uses sp(3)d(5)s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La(2)O(3)) material and the orientation with z [001] using the Non-Equilibrium Green Function (NEGF) method, have been analyzed. The electrical characteristics and the parameters for the multi-gate nanowires have been realized. A nanowire comprises a heavily doped n(+) donor source and drains doping and n-donor doping at the channel. The specified nanowire has a gate length and channel length of 15 nm each, a source-drain device length L(SD) = 35 nm, with La(2)O(3) as 1 nm (gate dielectric oxide) each on the top and bottom of the core material (Si/GaAs). The Gate-All-Around (GAA) Si NW is superior with a high (I(ON)/I(OFF) ratio) of 1.06 × 10(9), and a low leakage current, or OFF current (I(OFF)), of 3.84 × 10(-14) A. The measured values of the mid-channel conduction band energy (E(c)) and charge carrier density (ρ) at V(G) = V(D) = 0.5 V are -0.309 eV and 6.24 × 10(23) C/cm(3), respectively. The nanowires with hydrostatic strain have been determined by electrostatic integrity and increased mobility, making them a leading solution for upcoming technological nodes. The transverse dimensions of the rectangular nanowires with similar energy levels are realized and comparisons between Si and GaAs NWs have been performed.