Abstract
The thermal rate constants and H/D kinetic isotope effects (KIEs) of the reactions SiH(4) + H → SiH(3) + H(2) and SiH(4) + CH(3) → SiH(3) + CH(4) were calculated with the variational transition state theory including multidimensional tunneling corrections (VTST-MT). The ωB97X-D and CCSD(T) methods were employed to compute the barrier height and reaction energy. The ωB97X-D/aug-cc-pVTZ methodology was used to build reaction paths, and the CCSD(T)/CBS(Q-5) approach was used to improve the energetics of the stationary points in the calculations of CVT/μOMT thermal rate constants. For the SiH(4) + H pathway, the CVT/μOMT rate constants and H/D KIEs are in excellent agreement with previous experimental and theoretical calculations; otherwise, for the SiH(4) + CH(3) pathway, which has few experimental and theoretical data available, it has provided, for the first time, rate constants and kinetic isotope effects using variational transition state theory with multidimensional tunneling corrections.