Abstract
Electrochemical deposition into a prepared SiO(2)/Si-p ion track template was used to make orthorhombic SnO(2) vertical nanowires (NWs) for this study. As a result, a SnO(2)-NWs/SiO(2)/Si nanoheterostructure with an orthorhombic crystal structure of SnO(2) nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current-voltage characteristic measurement showed that the SnO(2)-NWs/SiO(2)/Si nanoheterostructure made this way has many p-n junctions.