Ce Doping Effects on the Hydrogen Sensing Properties of Graphene/SnO(2)-Based Sensors

Ce掺杂对石墨烯/SnO(2)基传感器氢气传感性能的影响

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Abstract

The development of a sensor capable of selectively detecting hydrogen levels in the environment holds immense importance for ensuring the safer utilization of hydrogen energy. In this study, a hydrogen sensor made of Ce-doped single-layer graphene (SLG)/SnO(2) composite material was fabricated using a hydrothermal method. The study examined the impact of varying Ce doping concentrations on the hydrogen sensing capabilities of the SLG/SnO(2) matrix. The results show that the SLG/SnO(2) hydrogen sensor doped with 2 mol% Ce demonstrated optimal performance at a humidity of 20%. It operated most efficiently at 250 °C, with a response of 2.49, representing a 25.75% improvement over the undoped sample. The response/recovery times were 0.46/3.92 s, which are 54.9% shorter than those of the undoped sample. The enhancement in hydrogen sensitivity stems from the synergistic effect of Ce and SLG, which facilitates the coexistence of n-n and p-n heterojunctions, thereby increasing carrier mobility and refining grain structure. Analysis via X-ray photoelectron spectroscopy (XPS) reveals that Ce increases the material's oxygen vacancy concentration, enhancing its hydrogen sensitivity. Ce-doped SLG/SnO(2), with its robust hydrogen sensitivity, represents one of the leading candidates for future hydrogen gas sensors.

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