Nitriding of Commercially Pure (CP) Titanium Grade 2 by the Active Screen Method

采用活性筛分法对2级商用纯钛(CP)进行氮化处理

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Abstract

This paper addresses the formation of nitrided layers on CP Titanium Grade 2 substrates under direct current (DC) glow discharge conditions. In the preliminary research, the parameters for glow discharge plasma nitriding were selected, and the threshold process temperature was determined to ensure the formation of a continuous and uniform titanium nitride layer on the nitrided samples using the active screen method. On the other hand, the core research involved further detailed analysis of the formed surface layers at nitriding temperatures of 685 °C, 700 °C and 715 °C. It has been demonstrated that the nitriding of CP Titanium Grade 2 under DC glow discharge conditions using an active screen enables the formation of surface layers with uniform thicknesses and proper structures over the entire surface of the nitrided component.

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