Abstract
Ag(2)Se shows significant potential for near-room-temperature thermoelectric applications, but its performance and device design are still evolving. In this work, we design a novel flexible Ag(2)Se thin-film-based thermoelectric device with optimized electrode materials and structure, achieving a high output power density of over 65 W m(-2) and a normalized power density up to 3.68 μW cm(-2) K(-2) at a temperature difference of 42 K. By fine-tuning vapor selenization time, we strengthen the (013) orientation and carrier mobility of Ag(2)Se films, reducing excessive Ag interstitials and achieving a power factor of over 29 μW cm(-1) K(-2) at 393 K. A protective layer boosts flexibility of the thin film, retaining 90% performance after 1000 bends at 60°. Coupled with p-type Sb(2)Te(3) thin films and rational simulations, the device shows rapid human motion response and precise servo motor control, highlighting the potential of high-performance Ag(2)Se thin films in advanced applications.