Abstract
Copper antimony sulfide (CuSbS(2)) has attracted significant interest as an earth-abundant photovoltaic absorber. However, the efficiency of the current CuSbS(2) photovoltaic device is too low to meet the requirement of a large-scale application. In this study, selenylation was introduced to optimize the band structure and improve the device performance. Selenized CuSbS(2) [CuSbS(2)(Se)] films were realized using porous CuSbS(2) films prepared by spray deposition with a post-treatment in Se vapor. The as-prepared CuSbS(2)(Se) films exhibited a compact structure. X-ray diffraction and elemental analysis confirmed the effective doping of Se into the lattice by substituting a part of S in CuSbS(2). Elemental analysis revealed a gradient distribution for Se from the top surface to the deeper regions, and the substitution rate was very high (>39%). Dark J-V characteristics and AC impedance spectroscopy analysis showed that selenylation significantly reduced the carrier recombination center. As a result, the selenized CuSbS(2) device exhibited a significant efficiency improvement from 0.12% to 0.90%, which is much higher than that of the simply annealed device (0.46%), indicating this technique is a promising approach to improve the performance of CuSbS(2) solar cells.