Abstract
The interface between the perovskite layer and the hole transport layer (HTL) plays a vital role in hole extraction and electron blocking in perovskite solar cells (PSCs), and it is particularly susceptible to harmful defects. Surface passivation is an effective strategy for addressing the above concerns. However, because of its strong polarity, isopropyl alcohol (IPA) is used as a solvent in all of the surface treatment materials reported thus far, and it frequently damages the surface of perovskite. In this paper, a method is proposed for dissolving the passivation materials, for example, guanidine bromide (GABr), in mixed solvents (1:1) of IPA and toluene (TL), which can efficiently passivate interface and grain boundary defects by minimizing the IPA solubility of the perovskite surface. As a result, all the performance parameters Voc, Jsc, and FF are improved, and the power conversion efficiency (PCE) increased from 20.1 to 22.7%. Moreover, combining the PSCs with GABr post-treatment in mixed solvents with copper indium gallium selenide (CIGS) solar cells, a 4-terminal (4T) perovskite/CIGS tandem device is realized and a PCE of 25.5% is achieved. The mixed solvent passivation strategy demonstrated here, hopefully, will open new avenues for improving PSCs' efficiency and stability.