Abstract
The synthesis method of transparent and flexible ZnO thin films is currently considered the most important factor for the fabrication of next generation wearable devices. To fabricate transparent and flexible devices by using sol-gel spin-coated ZnO thin films, an annealing step is necessary; however, annealing processes at high temperatures decompose polymer substrates due to their low melting temperature. It was found that sol-gel spin-coated ZnO thin films can be crystallized through the mobility difference of ZnO molecules placed at the surface of ZnO thin films. Especially, ZnO thin films can be annealed at high temperature (above 500 °C) by using a thermal dissipation annealing (TDA) method without the deformation of the polymer substrate. A transparent and flexible ultraviolet photodetector based on ZnO thin films annealed with the TDA method exhibited fast rise and decay time constants, a high on/off current ratio, and reproducible photocurrent characteristics. Thus, these results indicated that the TDA method is a feasible alternative route for the fabrication of next generation wearable devices.