Abstract
The conductor aluminum alloys of Al-0.25wt.%Zr alloyed additionally with X = Er, Si, Hf and Nb were the objects of our investigations. The fine-grained microstructure in the alloys was formed via equal channel angular pressing and rotary swaging. The thermal stability of the microstructure, specific electrical resistivity and microhardness of the novel conductor aluminum alloys were investigated. The mechanisms of nucleation of the Al3(Zr, X) secondary particles during annealing the fine-grained aluminum alloys were determined using the Jones-Mehl-Avrami-Kolmogorov equation. Using the Zener equation, the dependencies of the average secondary particle sizes on the annealing time were obtained on the base of the analysis of the data on the grain growth in the aluminum alloys. The secondary particle nucleation during long-time low-temperature annealing (300 °C, 1000 h) was shown to go preferentially at the cores of the lattice dislocations. The Al-0.25%Zr-0.25%Er-0.20%Hf-0.15%Si alloy subjected to long-time annealing at 300 °C has the optimal combination of microhardness and electrical conductivity (59.8%IACS, Hv = 480 ± 15 MPa).