Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth Environment
借助纯净的生长环境,可在超低温下实现锗外延生长
期刊:ACS Applied Electronic Materials
影响因子:4.7
doi:10.1021/acsaelm.4c01678
Wilflingseder, Christoph; Aberl, Johannes; Prado Navarrete, Enrique; Hesser, Günter; Groiss, Heiko; Liedke, Maciej O; Butterling, Maik; Wagner, Andreas; Hirschmann, Eric; Corley-Wiciak, Cedric; Zoellner, Marvin H; Capellini, Giovanni; Fromherz, Thomas; Brehm, Moritz