日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures

ScN/GaN(11̅00): 无孪晶金属-半导体异质结构外延生长的新平台

John, Philipp; Trampert, Achim; Van Dinh, Duc; Spallek, Domenik; Lähnemann, Jonas; Kaganer, Vladimir M; Geelhaar, Lutz; Brandt, Oliver; Auzelle, Thomas

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

利用选择性区域升华法自上而下制备有序的GaN纳米线阵列

Fernández-Garrido, Sergio; Auzelle, Thomas; Lähnemann, Jonas; Wimmer, Kilian; Tahraoui, Abbes; Brandt, Oliver