日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

A highly hydroxylated 6-tin oxide cluster serves as an efficient e-beam and EUV-photoresist to achieve high-resolution patterns

一种高度羟基化的6-氧化锡簇可用作高效的电子束和极紫外光刻胶,以实现高分辨率图案。

Li, Cheng-Dun; Chou, Chun-Fu; Tseng, Yu-Fang; Lin, Burn-Jeng; Gau, Tsai-Sheng; Chen, Po-Hsiung; Chiu, Po-Wen; Chen, Sun-Zen; Tsai, Shin-Lin; Jian, Wen-Bin; Liu, Jui-Hsiung

Synthesis of pentameric chlorotin carboxylate clusters for high resolution EUV photoresists under small doses

小剂量下合成用于高分辨率极紫外光刻胶的五聚体氯锡羧酸盐簇

Li, Cheng-Dun; Lin, Ting-An; Chen, Po-Hsiung; Gau, Tsai-Sheng; Lin, Burn-Jeng; Chiu, Po-Wen; Liu, Jui-Hsiung

Novel hexameric tin carboxylate clusters as efficient negative-tone EUV photoresists: high resolution with well-defined patterns under low energy doses

新型六聚体锡羧酸盐簇作为高效负性极紫外光刻胶:在低能量剂量下实现高分辨率和清晰图案

Wu, Jia-Rong; Lin, Ting-An; Wu, Yan-Ru; Chen, Po-Hsiung; Gau, Tsi-Sheng; Lin, Burn-Jeng; Chiu, Po-Wen; Liu, Rai-Shung

Highly hydroxylated hafnium clusters are accessible to high resolution EUV photoresists under small energy doses

高羟基化的铪簇在低能量剂量下即可被高分辨率极紫外光刻胶所修饰。

Tseng, Yu-Fang; Liao, Pin-Chia; Chen, Po-Hsiung; Gau, Tsai-Sheng; Lin, Burn-Jeng; Chiu, Po-Wen; Liu, Jui-Hsiung

Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology

用于FinFET CMOS技术中EUV曝光控制的嵌入式微型探测器

Wang, Chien-Ping; Lin, Burn Jeng; Wu, Pin-Jiun; Shih, Jiaw-Ren; Chih, Yue-Der; Chang, Jonathan; Lin, Chrong Jung; King, Ya-Chin

Detectors Array for In Situ Electron Beam Imaging by 16-nm FinFET CMOS Technology

采用16纳米FinFET CMOS技术的原位电子束成像探测器阵列

Wang, Chien-Ping; Lin, Burn Jeng; Shih, Jiaw-Ren; Chih, Yue-Der; Chang, Jonathan; Lin, Chrong Jung; King, Ya-Chin