日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

Effects of Pressure on Optoelectronic Properties of Perovskite Thin Films Fabricated via Radio Frequency Sputtering

压力对射频溅射法制备的钙钛矿薄膜光电性能的影响

Wongcharoen, Sittan; Techapiesancharoenkij, Ratchatee; Raifuku, Itaru; Goda, Tomoya; Auewattanapun, Krittin; Kawanishi, Hidenori; Bonnassieux, Yvan; Roca I Cabarrocas, Pere; Hara, Kosuke; Uraoka, Yukiharu

Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditions

氢等离子体处理和硅纳米线生长条件下Cu-In催化剂纳米粒子的演变

Wang, Weixi; Ngo, Éric; Bulkin, Pavel; Zhang, Zhengyu; Foldyna, Martin; Roca I Cabarrocas, Pere; Johnson, Erik V; Maurice, Jean-Luc

SARS-CoV-2 transmission risk screening for safer social events: a non-randomised controlled study

SARS-CoV-2 传播风险筛查,以保障社交活动安全:一项非随机对照研究

Ramos, Rafel; Alves-Cabratosa, Lia; Blanch, Jordi; Pèlach, Àlex; Albert, Laura; Salomó, Quirze; Cabarrocas, Sílvia; Comas-Cufí, Marc; Martí-Lluch, Ruth; Ponjoan, Anna; Garcia-Gil, Maria; de Cambra, Salomé; d'Anta, Albert; Balló, Elisabet; Alum, Albert; Aleixandre, Rosa Núria

Influence of the Electron Beam and the Choice of Heating Membrane on the Evolution of Si Nanowires' Morphology in In Situ TEM

电子束和加热膜的选择对原位透射电镜下硅纳米线形貌演变的影响

Shen, Ya; Zhao, Xuechun; Gong, Ruiling; Ngo, Eric; Maurice, Jean-Luc; Roca I Cabarrocas, Pere; Chen, Wanghua

Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF(4) Based Process Conditions

采用相同SiF₄基工艺条件,通过PECVD法制备微晶硅和外延硅薄膜的质量对比研究

Moreno, Mario; Ponce, Arturo; Galindo, Arturo; Ortega, Eduardo; Morales, Alfredo; Flores, Javier; Ambrosio, Roberto; Torres, Alfonso; Hernandez, Luis; Vazquez-Leal, Hector; Patriarche, Gilles; Cabarrocas, Pere Roca I

Local V(OC) Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires

利用开尔文探针力显微镜对PIN径向结硅纳米线进行局部V(OC)测量

Marchat, Clément; Dai, Letian; Alvarez, José; Le Gall, Sylvain; Kleider, Jean-Paul; Misra, Soumyadeep; Roca I Cabarrocas, Pere

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

沉积速率对等离子体增强化学气相沉积外延硅结构性能的影响

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca I

Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation

利用液滴介导的普拉托-瑞利变换构建岛链状硅纳米线

Xue, Zhaoguo; Xu, Mingkun; Zhao, Yaolong; Wang, Jimmy; Jiang, Xiaofan; Yu, Linwei; Wang, Junzhuan; Xu, Jun; Shi, Yi; Chen, Kunji; Roca I Cabarrocas, Pere

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

低温等离子体增强化学气相沉积法在GaAs上外延生长硅:III-V/Si集成的新范式

Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

Plasma-Assisted Growth of Silicon Nanowires by Sn Catalyst: Step-by-Step Observation

锡催化剂辅助等离子体生长硅纳米线:逐步观察

Tang, Jian; Maurice, Jean-Luc; Chen, Wanghua; Misra, Soumyadeep; Foldyna, Martin; Johnson, Erik V; Roca I Cabarrocas, Pere