日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Neuromorphic Visual Receptive Field Hardware with Vertically Integrated Indium-Gallium-Zinc-Oxide Optoelectronic Memristors over Silicon Neuron Transistors

基于硅神经元晶体管的垂直集成铟镓锌氧化物光电忆阻器的神经形态视觉感受野硬件

期刊:Advanced Materials
影响因子:26.8
doi:10.1002/adma.202513907
Kim, Hyun Wook; Kim, Jin Hong; Shin, Dong Hoon; Jung, Min Chung; Park, Tae Won; Park, Hyung Jun; Han, Joon-Kyu; Hwang, Cheol Seong
神经科学
发表日期：2026
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Spatiotemporal Reservoir Computing with a Reconfigurable Multifunctional Memristor Array

基于可重构多功能忆阻器阵列的时空储层计算

期刊:Advanced Materials
影响因子:26.8
doi:10.1002/adma.202510635
Kim, Sungho; Shin, Dong Hoon; Choi, Wonho; Cheong, Sunwoo; Shim, Sung Keun; Lee, Soo Hyung; Han, Janguk; Jang, Yoon Ho; Son, Kunhee; Ghenzi, Néstor; Hwang, Cheol Seong
发表日期：2026
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Vertical Self-Rectifying Memristive Arrays for Page-Wise Parallel Logic and Arithmetic Processing

用于逐页并行逻辑和算术处理的垂直自整流忆阻器阵列

期刊:Advanced Materials
影响因子:26.8
doi:10.1002/adma.202514099
Son, Kunhee; Cho, Jea Min; Shin, Dong Hoon; Kim, Yeong Rok; Ghenzi, Néstor; Cheong, Sunwoo; Kim, Byeong Su; Lee, Jung Kyu; Kim, Sungho; Choi, Wonho; Lee, Soo Hyung; Han, Janguk; Hwang, Cheol Seong
发表日期：2026
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Multi-State Probabilistic Computing Using Floating-Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems

基于 Potts 模型的浮体 MOSFET 多状态概率计算在解决复杂组合优化问题中的应用

期刊:Advanced Materials
影响因子:26.8
doi:10.1002/adma.202516797
Cheong, Sunwoo; Lee, Soo Hyung; Han, Janguk; Park, Jun-Young; Shin, Dong Hoon; Jang, Yoon Ho; Shim, Sung Keun; Kim, Sungho; Hwang, Cheol Seong; Han, Joon-Kyu
发表日期：2026
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Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory

利用牺牲原子层沉积法制备超薄单原子锑薄膜用于相变存储器

期刊:Advanced Materials
影响因子:26.8
doi:10.1002/adma.202519924
Jeon, Gwangsik; Jeon, Sangmin; Lee, Seunghwan; Jeon, Jeong Woo; Choi, Wonho; Park, Byongwoo; Kim, Sungjin; Yoo, Chanyoung; Jang, Hyejin; Hwang, Cheol Seong
发表日期：2026
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Vertical Memristive Crossbar Array for Multilayer Graph Embedding and Analysis

用于多层图嵌入和分析的垂直忆阻交叉阵列

期刊:Advanced Materials
影响因子:26.8
doi:10.1002/adma.202416988
Han, Janguk; Jang, Yoon Ho; Moon, Ji Won; Shim, Sung Keun; Cheong, Sunwoo; Lee, Soo Hyung; Park, Tae Won; Han, Joon-Kyu; Hwang, Cheol Seong
发表日期：2025
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Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor

纤锌矿/萤石双层结构中邻近效应诱导的铁电开关用于高性能铁电场效应晶体管

期刊:Advanced Materials
影响因子:26.8
doi:10.1002/adma.202509088
Kim, Kyung Do; Yeom, Min Kyu; Park, Han Sol; Jeon, Gwangsik; Hwang, Cheol Seong
发表日期：2025
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Vertical Stacking of Atomic-Layer-Deposited Oxide Layers via a Fluorinated Graphene Transfer Technique

利用氟化石墨烯转移技术实现原子层沉积氧化物层的垂直堆叠

期刊:ACS Nano
影响因子:16
doi:10.1021/acsnano.5c04669
Kim, Hyunjun; Ryu, Huije; Jeong, Hyun Woo; Kim, Jiwoo; Moon, Donghoon; Mun, Sahngik Aaron; Hwang, Cheol Seong; Park, Min Hyuk; Son, Jangyup; Lee, Gwan-Hyoung
发表日期：2025
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Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors

通过解耦AlScN/AlN/AlScN叠层中的极化和矫顽场来提高铁电薄膜晶体管的性能

期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-025-62904-6
Kim, Kyung Do; Ryoo, Seung Kyu; Yeom, Min Kyu; Lee, Suk Hyun; Choi, Wonho; Kim, Yunjae; Choi, Jung-Hae; Xin, Tianjiao; Cheng, Yan; Hwang, Cheol Seong
发表日期：2025
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Next-generation graph computing with electric current-based and quantum-inspired approaches

基于电流和量子启发的下一代图计算方法

期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-025-63494-z
Jang, Yoon Ho; Han, Janguk; Lee, Soo Hyung; Hwang, Cheol Seong
发表日期：2025
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