The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications
沟道层厚度对射频应用中GaN HEMT性能的影响
期刊:Micromachines
影响因子:3
doi:10.3390/mi16010001
Yu, Qian; Wu, Sheng; Zhang, Meng; Yang, Ling; Zou, Xu; Lu, Hao; Shi, Chunzhou; Gao, Wenze; Wu, Mei; Hou, Bin; Qiu, Gang; He, Xiaoning; Ma, Xiaohua; Hao, Yue