日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers

针对射频/毫米波功率放大器的肖特基栅GaN-on-Silicon HEMT结构在偏置温度应力下的电荷俘获和发射

期刊:Micromachines
影响因子:3
doi:10.3390/mi15080951
O'Sullivan, Barry; Rathi, Aarti; Alian, Alireza; Yadav, Sachin; Yu, Hao; Sibaja-Hernandez, Arturo; Peralagu, Uthayasankaran; Parvais, Bertrand; Chasin, Adrian; Collaert, Nadine
发表日期：2024
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Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

在300毫米硅衬底上单片集成纳米脊状InGaP/GaAs异质结双极晶体管

期刊:Materials
影响因子:3.2
doi:10.3390/ma14195682
Mols, Yves; Vais, Abhitosh; Yadav, Sachin; Witters, Liesbeth; Vondkar, Komal; Alcotte, Reynald; Baryshnikova, Marina; Boccardi, Guillaume; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine; Langer, Robert; Kunert, Bernardette
发表日期：2021
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Short-term follow-up of masticatory adaptation after rehabilitation with an immediately loaded implant-supported prosthesis: a pilot assessment

即刻负重种植体支持式义齿修复后咀嚼功能适应的短期随访：一项初步评估

期刊:International Journal of Implant Dentistry
影响因子:4
doi:10.1186/s40729-017-0070-x
Tanaka, Mihoko; Bruno, Collaert; Jacobs, Reinhilde; Torisu, Tetsurou; Murata, Hiroshi
发表日期：2017
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