Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices
用于高性能原子级薄CMOS器件的菱面体堆叠双层过渡金属二硫化物
期刊:Science Advances
影响因子:12.5
doi:10.1126/sciadv.ade5706
Li, Xuefei; Shi, Xinhang; Marian, Damiano; Soriano, David; Cusati, Teresa; Iannaccone, Giuseppe; Fiori, Gianluca; Guo, Qi; Zhao, Wenjie; Wu, Yanqing