355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors
355纳米纳秒紫外脉冲激光退火对非晶In-Ga-ZnO薄膜晶体管的影响
期刊:Micromachines
影响因子:3
doi:10.3390/mi15010103
Park, Sang Yeon; Choi, Younggon; Seo, Yong Hyeok; Kim, Hojun; Lee, Dong Hyun; Truong, Phuoc Loc; Jeon, Yongmin; Yoo, Hocheon; Kwon, Sang Jik; Lee, Daeho; Cho, Eou-Sik