Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
利用多孔SiO2缓冲层实现Zr:SiO2 RRAM器件的空间电场集中效应
期刊:Nanoscale Research Letters
影响因子:
doi:10.1186/1556-276X-8-523
Chang, Kuan-Chang; Huang, Jen-Wei; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Young, Tai-Fa; Chen, Jung-Hui; Zhang, Rui; Lou, Jen-Chung; Huang, Syuan-Yong; Pan, Yin-Chih; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Bao, Ding-Hua; Sze, Simon M