日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods

深紫外AlGaN微棒的尺寸依赖性发射增强

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano16060355
Sun, Xu; Yan, Ziwen; Xu, Tong; Zhu, Jiajun; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Liu, Bin; Shi, Yi; Zhang, Rong; Zheng, Youdou; Chen, Peng
发表日期：2026
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Multiple exciton generation boosting over 100% quantum efficiency photoelectrochemical photodetection

多激子生成使光电化学光电探测的量子效率提高100%以上

期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-025-60420-1
Xue, Junjun; Wang, Xu; Xu, Guanyu; Tao, Xinya; Pan, Tongdao; Chen, Zhouyu; Cai, Qing; Shao, Pengfei; Yang, Guofeng; Huang, Zengli; Zhi, Ting; Wang, Ke; Liu, Bin; Chen, Dunjun; Zhang, Rong; Wang, Jin
发表日期：2025
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Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires

镓基异质结构纳米线中紫外光热电双极脉冲的观测

期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-025-56617-z
Zhu, Jinjie; Cai, Qing; Shao, Pengfei; Zhang, Shengjie; You, Haifan; Guo, Hui; Wang, Jin; Xue, Junjun; Liu, Bin; Lu, Hai; Zheng, Youdou; Zhang, Rong; Chen, Dunjun
发表日期：2025
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Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy

二维缓冲层突破了III族氮化物外延的衬底限制

期刊:Science Advances
影响因子:12.5
doi:10.1126/sciadv.adw5005
Sang, Yimeng; Xu, Xiangming; Wu, Ying; Feng, Guanqun; Zhang, Xu; Zhuo, Fulin; Jin, Zhengxian; Guo, Hui; Tao, Tao; Ding, Sun'an; Wang, Xuefeng; Chen, Dunjun; Ohkawa, Kazuhiro; Xing, Kun; Wang, Xinran; Zhuang, Zhe; Zhang, Rong; Alshareef, Husam N; Liu, Bin
发表日期：2025
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Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions

AlGaN/GaN异质结对钾离子的吸附特性

期刊:Molecules
影响因子:4.6
doi:10.3390/molecules30132669
Dong, Yan; Li, Mengmeng; Liu, Yanli; Lei, Jianming; Bai, Haineng; Sun, Yanmei; Chen, Dunjun; Zhu, Dongjie; Wang, Rigao; Sun, Yi
发表日期：2025
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Electromagnetic Nanocoils Based on InGaN Nanorings

基于InGaN纳米环的电磁纳米线圈

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano15030245
Yan, Ziwen; Chen, Peng; Zhang, Xianfei; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Zhao, Hong; Shi, Yi; Zhang, Rong; Zheng, Youdou
发表日期：2025
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Evaluation on Temperature-Dependent Transient V(T) Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

通过快速扫描表征评估负栅应力下p-GaN栅HEMT的温度相关瞬态V(T)不稳定性

期刊:Micromachines
影响因子:3
doi:10.3390/mi13071096
Wang, Rui; Guo, Hui; Hou, Qianyu; Lei, Jianming; Wang, Jin; Xue, Junjun; Liu, Bin; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou
发表日期：2022
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Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors

基于p-GaN/AlGaN/GaN HEMT的紫外光电晶体管结构设计的仿真研究

期刊:Micromachines
影响因子:3
doi:10.3390/mi13122210
Wang, Haiping; You, Haifan; Yang, Jiangui; Yang, Minqiang; Wang, Lu; Zhao, Hong; Xie, Zili; Chen, Dunjun
发表日期：2022
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Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric

采用PECVD-SiNx作为栅极介质的低漏电流、高击穿场AlGaN/GaN MIS-HEMT器件

期刊:Micromachines
影响因子:3
doi:10.3390/mi13091396
Gao, Xiaohui; Guo, Hui; Wang, Rui; Pan, Danfeng; Chen, Peng; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou
MIS
发表日期：2022
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Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

基于AlGaN的日盲紫外光电探测器和焦平面阵列的研究进展

期刊:Light-Science & Applications
影响因子:23.4
doi:10.1038/s41377-021-00527-4
Cai, Qing; You, Haifan; Guo, Hui; Wang, Jin; Liu, Bin; Xie, Zili; Chen, Dunjun; Lu, Hai; Zheng, Youdou; Zhang, Rong
发表日期：2021
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