Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
在MOVPE法生长的高阻硅衬底上GaN HEMT中异常衬底导电的起源
期刊:ACS Applied Electronic Materials
影响因子:4.7
doi:10.1021/acsaelm.0c00966
Ghosh, Saptarsi; Hinz, Alexander; Fairclough, Simon M; Spiridon, Bogdan F; Eblabla, Abdalla; Casbon, Michael A; Kappers, Menno J; Elgaid, Khaled; Alam, Saiful; Oliver, Rachel A; Wallis, David J
