日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Nanosecond Carrier Lifetime of Hexagonal Ge

六方锗的纳秒级载流子寿命

期刊:ACS Photonics
影响因子:6.7
doi:10.1021/acsphotonics.4c01135
van Lange, Victor T; Dijkstra, Alain; Fadaly, Elham M T; Peeters, Wouter H J; van Tilburg, Marvin A J; Bakkers, Erik P A M; Bechstedt, Friedhelm; Finley, Jonathan J; Haverkort, Jos E M
发表日期：2024
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Low Surface Recombination in Hexagonal SiGe Alloy Nanowires: Implications for SiGe-Based Nanolasers

六方硅锗合金纳米线表面复合率低：对硅锗基纳米激光器的启示

期刊:ACS Applied Nano Materials
影响因子:5.5
doi:10.1021/acsanm.3c05770
Berghuis, Wilhelmus J H Willem-Jan; van Tilburg, Marvin A J; Peeters, Wouter H J; van Lange, Victor T; Farina, Riccardo; Fadaly, Elham M T; Renirie, Elsa C M; Theeuwes, Roel J; Verheijen, Marcel A; Macco, Bart; Bakkers, Erik P A M; Haverkort, Jos E M; Kessels, Wilhelmus M M Erwin
发表日期：2024
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Unveiling Planar Defects in Hexagonal Group IV Materials

揭示六方IV族材料中的平面缺陷

期刊:Nano Letters
影响因子:9.1
doi:10.1021/acs.nanolett.1c00683
Fadaly, Elham M T; Marzegalli, Anna; Ren, Yizhen; Sun, Lin; Dijkstra, Alain; de Matteis, Diego; Scalise, Emilio; Sarikov, Andrey; De Luca, Marta; Rurali, Riccardo; Zardo, Ilaria; Haverkort, Jos E M; Botti, Silvana; Miglio, Leo; Bakkers, Erik P A M; Verheijen, Marcel A
发表日期：2021
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Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and Si(x)Ge(1-x) Alloys in Nanowires by Raman Spectroscopy

利用拉曼光谱探测纳米线中六方锗和Si(x)Ge(1-x)合金的晶格动力学和电子共振

期刊:ACS Nano
影响因子:16
doi:10.1021/acsnano.0c00762
de Matteis, Diego; De Luca, Marta; Fadaly, Elham M T; Verheijen, Marcel A; López-Suárez, Miquel; Rurali, Riccardo; Bakkers, Erik P A M; Zardo, Ilaria
发表日期：2020
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Observation of Conductance Quantization in InSb Nanowire Networks

在InSb纳米线网络中观察到电导量子化现象

期刊:Nano Letters
影响因子:9.1
doi:10.1021/acs.nanolett.7b00797
Fadaly, Elham M T; Zhang, Hao; Conesa-Boj, Sonia; Car, Diana; Gül, Önder; Plissard, Sébastien R; Op Het Veld, Roy L M; Kölling, Sebastian; Kouwenhoven, Leo P; Bakkers, Erik P A M
发表日期：2017
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