Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al(x)Ga(1-x)N Layers
具有两个过渡Al(x)Ga(1-x)N层的(111)硅上GaN HEMT的应变分析
期刊:Materials
影响因子:3.2
doi:10.3390/ma11101968
Cai, Yuefei; Zhu, Chenqi; Jiu, Ling; Gong, Yipin; Yu, Xiang; Bai, Jie; Esendag, Volkan; Wang, Tao
