Solid-State Laser Annealing (SLA) of Fully Solution-Processed Amorphous InZnO Thin-Film Transistors at Various Fluence
采用不同能量密度对全溶液法制备的非晶态InZnO薄膜晶体管进行固态激光退火(SLA)
期刊:ACS Omega
影响因子:4.3
doi:10.1021/acsomega.4c10687
Thazin, Nu Myat; Bermundo, Juan Paolo S; Hanifah, Umu; Richter, Johannes; Geburt, Sebastian; Uraoka, Yukiharu